Abstract: We report on the packaging design and development of SiC GTO and SiC PiN in one module for pulse power application. The module is designed to withstand voltage up to 4KV. SiC GTO is a solid ...
Abstract: The reliability of Insulated Gate Bipolar Transistor (IGBT) modules is critical for long-term durability and operational stability in power electronic systems. This paper presents a ...
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