Researchers developed a dual-modulated vertically stacked transistor that eliminates current leakage at nanoscale channel lengths, advancing low-power 3D chip integration.
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Key transistor for next-generation 3D stacked semiconductors operates without current leakage
A research team led by Professor Jae Eun Jang and Dr. Goeun Pyo from the Department of Electrical Engineering and Computer Science at DGIST has developed "dual-modulated vertically stacked transistors ...
Researchers developed a dual-modulated vertical transistor that suppresses leakage at nanoscale channels and supports ...
In this Q&A, you will learn about some of the technologies and techniques that are making it possible to address advanced packaging challenges.
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