Artificial intelligence (AI) has become the workload that defines today’s semiconductor scaling. Whether in hyperscale data centers training foundation models or at the network edge executing ...
Samsung was the first fab to launch a 3nm process in mid-2022, beating TSMC to market by about six months. Plus, its 3nm node offers gate-all-around (GAA) transistors, which none of its rivals have ...
This whitepaper gives a compact overview of the recommended gate drive concepts for both GIT (gate injection transistor) and SGT (Schottky gate transistor) product families. A versatile standard drive ...
Duke engineers show how a common device architecture used to test 2D transistors overstates their performance prospects in real-world devices.
The transition from finFET technology to Gate-All-Around (GAA) technology helps to reduce transistor variability and resume channel length scaling. It also brings several new challenges in terms of ...
Lab architecture used to test 2D semiconductors artificially boosts performance metrics, making it harder to assess whether these materials can truly replace silicon.
Cornell researchers have used advanced electron microscopy to identify "mouse bite" defects in 3D transistors for the first time ...
Engineers are starting to build hardware that does not just run artificial intelligence, it behaves like a primitive form of it. Instead of long chains of conventional transistors, researchers are ...
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